JAWe will present the following three posters at the 10th Meeting of the Advanced Power Semiconductor Research Division of the Japan Society of Applied Physics, to be held at the ANA Crowne Plaza Kanazawa on November 30–December 1, 2023.
“Development of a TCAD Channel Mobility Model for p-Channel 4H-SiC MOSFETs”
Kazuma Shimura, Dai Okamoto, and Tetsuo Hatakeyama
“Channel-Length Dependence of Charge-Pumping Current in p-Channel SiC MOSFETs”
Yuta Taguchi, Dai Okamoto, Mitsuru Sometani, Hirohisa Hirai, Mitsuo Okamoto, and Tetsuo Hatakeyama
“TCAD Simulation of the Channel-Length Dependence of Charge-Pumping Current in SiC MOSFETs”
Kenta Kimata, Dai Okamoto, and Tetsuo Hatakeyama